Fracture toughness of polycrystalline silicon carbide thin films

Bellante, J. J.; Kahn, H.; Ballarini, R.; Zorman, C. A.; Mehregany, M.; Heuer, A. H.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071920
Academic Journal
Thin film polycrystalline silicon carbide (poly-SiC) doubly clamped microtensile specimens were fabricated using standard micromachining processes, and precracked using microindentation. The poly-SiC had been deposited on Si wafers by atmospheric pressure chemical vapor deposition, a process which leads to residual tensile stresses in the poly-SiC thin films; we measured the residual stress adjacent each specimen via a micromachined strain gauge. The stress intensity factor, KI, at the crack tip in each specimen depends on the magnitude of these residual stresses and the precrack length. Upon release, those precracks whose stress intensity exceeded a critical value, KIc, propagated to failure, whereas no crack growth was observed in those precracks with K


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