Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

Johnston, S. W.; Kurtz, S. R.; Friedman, D. J.; Ptak, A. J.; Ahrenkiel, R. K.; Crandall, R. S.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p072109
Academic Journal
Deep-level transient spectroscopy measurements on a reverse-biased p-type GaAsN Schottky diode grown by metalorganic chemical vapor deposition show a minority-carrier trap signal corresponding to an electron trap having an activation energy of about 0.2 eV. The proportion of trapped electrons agrees with that of modeled defect states near the Schottky-barrier metal interface whose occupation is affected by changing reverse-bias conditions. Estimates of thermionic emission provide adequate filling of the traps with electrons from the metal. The inclusion of a GaAs layer between the metal and GaAsN layer reduces the electron-trapping signal.


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