Room temperature tunneling transport through Si nanodots in silicon rich silicon nitride

Pei, Zingway; Su, Alex Y. K.; Hwang, H. L.; Hsiao, H. L.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p063503
Academic Journal
Devices containing Si nanodots (NDs) were made in an α-SiNx:H/Si NDs/α-SiNx:H structure to explore the transport characteristics. The Si NDs were embedded in a silicon nitride matrix and were produced by using a plasma enhanced chemical vapor deposition technique. Room temperature Si NDs related electron and hole tunneling transport were observed in these devices. Negative differential resistance in the current–voltage characteristics was observed for the hole tunneling. The peak-to-valley ratio was as high as 13.9. Transmission electron microscopy reveals that only one Si ND exists in the current transport direction. The Si NDs are ∼5 nm in diameter. A model with a double barrier band diagram is suggested to explain the Si NDs related transport.


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