TITLE

Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures

AUTHOR(S)
Mazur, Yu. I.; Wang, Zh. M.; Tarasov, G. G.; Xiao, Min; Salamo, G. J.; Tomm, J. W.; Talalaev, V.; Kissel, H.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p063102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Transient photoluminescence from a series of asymmetric InAs quantum-dot bilayers with a GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot planes is investigated. The interdot carrier transfer process is analyzed. In the framework of a three-level system, interdot carrier transfer times between 200 and 2500 ps are derived and compared with similar data from the literature. Within the semiclassical Wentzel–Kramers–Brillouin approximation, the observed “transfer time-barrier thickness-relation” supports nonresonant tunneling as the microscopic carrier transfer mechanism.
ACCESSION #
16345476

 

Related Articles

  • Micro-photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B. Selçuk, E.; Hamhuis, G. J.; Nötzel, R. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p535 

    Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity...

  • Study of electronic dynamics of quantum dots using resonant photoluminescence technique. Fedorov, A. V.; Rukhlenko, I. D. // Optics & Spectroscopy;May2006, Vol. 100 Issue 5, p716 

    The process of resonant photoluminescence of semiconductor quantum dots, which may serve as a basis for efficiently studying the dynamics of their electronic subsystem, is described theoretically. Potentialities of the spectroscopy of this type are analyzed using, as an example, the intraband...

  • Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. Liu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Navaretti, P.; Groom, K. M.; Hopkinson, M.; Hogg, R. A. // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143108 

    The effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs/GaAs quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature emission wavelength of the InAs QDs increases to ∼1.43 μm. For Sb compositions above 14%, the system becomes...

  • Peculiarities of the thermal activation of carriers in CdSe/ZnSe QD structures. Borkovska, L.; Korsunska, N.; Venger, Ye.; Sadofyev, Yu.; Kazakov, I.; Kryshtab, T. // Journal of Materials Science: Materials in Electronics;Jan2009 Supplement 1, Vol. 20, p102 

    The results of experimental and theoretical investigations of thermal quenching of quantum dot (QD) photoluminescence (PL) in CdSe/ZnSe heterostructures are presented. It is found that at low temperatures, when carriers are strongly localized in QDs, QD PL intensity depends linearly on...

  • Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density. Wei, Z. F.; Xu, S. J.; Duan, R. F.; Li, Q.; Jian Wang; Zeng, Y. P.; Liu, H. C. // Journal of Applied Physics;10/15/2005, Vol. 98 Issue 8, p084305 

    Variable-temperature photoluminescence (PL) spectra of Si-doped self-assembled InGaAs quantum dots (QDs) with and without GaAs cap layers were measured. Narrow and strong emission peak at 1075 nm and broad and weak peak at 1310 nm were observed for the buried and surface QDs at low temperature,...

  • Optical transition in discrete levels of Si quantum dots. Wu, X. L.; Xue, F. S. // Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2808 

    Photoluminescence (PL) measurements have been carried out on Si quantum dots (QDs) with sizes of 2–4 nm embedded in Si oxide films. Conspicuous multiple PL peaks separated in energy by up to 104 meV are observed and attributed to optical transitions in discrete energy levels of Si QDs. A...

  • InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers. Gong, Q.; Nötzel, R.; van Veldhoven, P. J.; Eijkemans, T. J.; Wolter, J. H. // Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1404 

    We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 μm region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P...

  • Room temperature emission from CdSe/ZnSSe/MgS single quantum dots. Arians, R.; Kümmell, T.; Bacher, G.; Gust, A.; Kruse, C.; Hommel, D. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p101114 

    The authors report on room temperature photoluminescence from single CdSe quantum dots. The quantum dots, realized by self-organized epitaxial growth, are embedded in ZnSSe/MgS barriers. The integrated intensity of the emission drops by less than a factor of 3 between 4 K and room temperature....

  • Temperature dependence of the photoluminescence emission from thiol-capped PbS quantum dots. Turyanska, L.; Patanè, A.; Henini, M.; Hennequin, B.; Thomas, N. R. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p101913 

    The authors report the temperature dependence of the near-infrared photoluminescence (PL) emission from thiol-capped PbS quantum dots. The high thermal stability of the PL allows the authors to study the thermal broadening of the dot emission over an extended temperature range (4–300 K)....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics