Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures

Mazur, Yu. I.; Wang, Zh. M.; Tarasov, G. G.; Xiao, Min; Salamo, G. J.; Tomm, J. W.; Talalaev, V.; Kissel, H.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p063102
Academic Journal
Transient photoluminescence from a series of asymmetric InAs quantum-dot bilayers with a GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot planes is investigated. The interdot carrier transfer process is analyzed. In the framework of a three-level system, interdot carrier transfer times between 200 and 2500 ps are derived and compared with similar data from the literature. Within the semiclassical Wentzel–Kramers–Brillouin approximation, the observed “transfer time-barrier thickness-relation” supports nonresonant tunneling as the microscopic carrier transfer mechanism.


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