Tuning of electron injections for n-type organic transistor based on charge-transfer compounds

Takahashi, Y.; Hasegawa, T.; Abe, Y.; Tokura, Y.; Nishimura, K.; Saito, G.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p063504
Academic Journal
A high mobility (∼1.0 cm2/V s) n-type organic field-effect transistor is devised in terms of the combination of semiconducting and metallic charge-transfer (CT) compounds, namely, DBTTF-TCNQ crystals as channels and TTF-TCNQ thin films as electrodes for carrier injections on top of the crystals. Comparison of the field-effect properties for devices with conventional electrode materials indicates the successful demonstration of the interface band engineering with use of the CT materials.


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