Origin of dark counts in In0.53Ga0.47As/In0.52Al0.48As avalanche photodiodes operated in Geiger mode

Karve, G.; Wang, S.; Ma, F.; Li, X.; Campbell, J. C.; Ispasoiu, R. G.; Bethune, D. S.; Risk, W. P.; Kinsey, G. S.; Boisvert, J. C.; Isshiki, T. D.; Sudharsanan, R.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p063505
Academic Journal
A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark count rate was studied to understand its origin in In0.53Ga0.47As/In0.52Al0.48As separate-absorption-charge-multiplication avalanche photodiodes. The dark count rate was observed to be a very weak function of temperature in the range from 77 K to 300 K. Various mechanisms for dark count generation were considered. Simulations of band-to-band tunneling in the In0.52Al0.48As multiplication layer were found to agree well with the experimental temperature dependence of dark count rate at various excess biases. To reduce tunneling-induced dark counts, a suitable design change to the detector structure is proposed.


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