Dual-gate pentacene organic field-effect transistors based on a nanoassembled SiO2 nanoparticle thin film as the gate dielectric layer

Cui, Tianhong; Liang, Guirong
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p064102
Academic Journal
In this paper, we report the fabrication of dual-gate organic field-effect transistors (OFETs) using self-assembled SiO2 and thermal oxide as gate dielectric materials and pentacene as a semiconductor. The top dielectric layer was formed by the low-cost and low-temperature self-assembly with SiO2 nanoparticles 45 nm in diameter. The fabricated dual-gate pentacene field-effect transistor (FET) has a threshold voltage of -2.2 V, a field-effect mobility of 0.1 cm2/V s, an Ion/off ratio of 3.8×103, and a slope of 1.3 V/decade. Compared to a single gate OFET, dual-gate FET has better performance with higher drain output current at the relatively low operating voltage, larger field-effect mobility, and better channel controllability by separately adjusting two gate biases.


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