Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

Zhao, Q. T.; Breuer, U.; Rije, E.; Lenk, St.; Mantl, S.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062108
Academic Journal
The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide/silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi/Si interface leads to the change of the SBH. The SBH of NiSi decreased gradually on n-Si(100) from 0.65 eV to 0.07 eV and increased correspondingly on p-Si(100).


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