Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs/AlInAs quantum-cascade structures

Tsujino, S.; Borak, A.; Müller, E.; Scheinert, M.; Falub, C. V.; Sigg, H.; Grützmacher, D.; Giovannini, M.; Faist, J.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062113
Academic Journal
The effect of intrasubband interface roughness scattering on intersubband transition linewidths in double-quantum-well and quantum-cascade (QC) structures is studied. In n-GaInAs/AlInAs structures, the calculated ratios between the linewidths of the spatially vertical and diagonal transitions agree with the experimental values. In p-Si/Si0.2Ge0.8 QC structures, the experimentally observed linewidth is a factor of 4–7 smaller than the predicted value. However, by assuming a vertical interface correlation between adjacent interfaces separated by less than ∼1.5 nm, the theory reproduces the experiment. Transmission electron microscopy of the SiGe QC sample reveals this vertical correlation, supporting the model.


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