Reducing the threshold current density of AlInGaAs/GaAs double quantum well lasers with n-type delta doping

Fekete, D.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p061115
Academic Journal
It is demonstrated that by positioning n-type Te-δ doping in the vicinity of two coupled quantum wells (QWs), a threshold current density of 67 A/cm2 per QW is obtained for a strained double QW AlInGaAs/GaAs laser designed to emit light at 0.8 μm. This low value stems in part from the higher initial electron population in the QWs but is mainly due to the enhanced coupling between the two QWs resulting from the overlap of the confined fundamental electronic levels in the two QWs under the injected current density at threshold.


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