TITLE

Crystallite size effect on the hole mobility of uniaxially aligned copper phthalocyanine thin-film field-effect transistors

AUTHOR(S)
Ofuji, Masato; Ishikawa, Ken; Takezoe, Hideo; Inaba, Katsuhiko; Omote, Kazuhiko
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062114
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We fabricated copper phthalocyanine (CuPc) thin-film field-effect transistors (FETs) with three different orientations of CuPc with respect to channels. The substrate rubbing treatment induced uniaxial orientation in CuPc layers, yielding higher hole mobility (∼0.02 cm2/V s) than that of untreated FETs. Although the rubbing treatment bore high-aspect-ratio (>10) CuPc domains oriented to rubbing direction, the mobility anisotropy of the film was only 1.4. This discrepancy was explained by analyzing grazing-incidence x-ray diffraction profiles, i.e.: (1) In-plane mean size of crystals was smaller than their appearance in atomic force microscopy, and (2) the crystallites were much shorter in the apparent long-hand direction (11 nm) than the direction perpendicular to it (44 nm).
ACCESSION #
16345424

 

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