TITLE

Optical and electrical properties of polycrystalline silicon–germanium thin films prepared by aluminum-induced layer exchange

AUTHOR(S)
Gjukic, M.; Lechner, R.; Buschbeck, M.; Stutzmann, M.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Large-grained polycrystalline silicon–germanium (poly-Si1-xGex) thin films have been obtained by the aluminum-induced layer exchange (ALILE) process. The optical and electrical properties of these layers have been investigated as a function of the alloy composition. Optical reflection spectra and Hall effect mobility measurements indicate a high structural quality of the recrystallized thin films, which is comparable to bulk crystalline silicon–germanium (c-Si1-xGex) samples prepared by more sophisticated methods. Due to the increasing solubility of aluminum as a substitutional shallow acceptor with increasing germanium content, the room temperature carrier density of holes is found to increase from 1.5×1018 cm-3 in poly-Si to 5×1020 cm-3 in poly-Ge produced by ALILE.
ACCESSION #
16345423

 

Related Articles

  • Role of SrRuO[sub 3] buffer layers on the superconducting properties of YBa[sub 2]Cu[sub 3]O[sub 7] films grown on polycrystalline metal alloy using a biaxially oriented MgO template. Jia, Q. X.; Foltyn, S. R.; Arendt, P. N.; Groves, J. R.; Holesinger, T. G.; Hawley, M. E.; Lu, P. // Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4571 

    A SrRuO[sub 3] (SRO) buffer layer has been developed for growth of superconducting YBa[sub 2]Cu[sub 3]O[sub 7] (YBCO) thick films on polycrystalline metal substrates where a biaxially oriented MgO layer— produced by ion-beam-assisted deposition (IBAD)—was used as a template. By...

  • Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001). Di Gaspare, L.; Palange, E. // Journal of Applied Physics;7/1/2000, Vol. 88 Issue 1, p120 

    Studies the pit formation and evolution in compositionally graded silicon-germanium (SiGe) thick films heteroepitaxially grown on Si(001) surfaces. Discovery of a class of pits intrinsic to the strained-layer growth; Mechanism of self-organization that drives the nucleation and growth evolution...

  • Formation of epitaxial CoSi[sub 2] by a Cr or Mo interlayer: Comparison with a Ti interlayer. Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, K.; Bender, H.; Brijs, B.; Vandervorst, W. // Journal of Applied Physics;2/15/2001, Vol. 89 Issue 4, p2146 

    The influence of Cr and Mo on phase formation and preferential orientation of CoSi[sub 2] is reported. Three different regimes are distinguished, depending on the thickness of the interlayer. For a thin interlayer or a capping layer, CoSi forms first, as in the standard Co/Si reaction. The...

  • Modeling growth of Si1-xGex epitaxial films from disilane and germane. Malik, Rajeev; Gulari, Erdogan; Li, Shin Hwa; Bhattacharya, Pallab K. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5193 

    Develops a Langmuir-Hinshelwood-type kinetic model for modeling growth of silicon-germanium alloys from disilane and germane on silicon substrates. Experimental dependence of the growth rate on temperature; Discussion of deposition pressure and gas phase hydrogen; Linear relationship between...

  • Temperature dependence of semiconducting and structural properties of Cr-Si thin films. Nava, F.; Tien, T.; Tu, K. N. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2018 

    Examines the temperature dependence of semiconducting and structural properties of coevaporated chromium-silicon (Cr-Si) thin alloy films. Kinetics of amorphous-to-crystalline transformation of Cr-Si alloy film; Measurements of the thermoelectric properties of Cr-Si; Conduction mechanism of...

  • Cooperative growth phenomena in silicon/germanium low-temperature epitaxy. Meyerson, Bernard S.; Uram, Kevin J.; LeGoues, Francoise K. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2555 

    A series of Si:Ge alloys and structures has been prepared by ultrahigh-vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect-free strained layers are deposited up to a critical thickness, whereupon the...

  • Oxidation of silicon-germanium alloys. I. An experimental study. Hellberg, P.-E.; Zhang, S.-L.; d'Heurle, F. M.; Petersson, C. S. // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5773 

    Examines the oxidation of polycrystalline SixGe1-x films with different compositions in pyrogenic steam for various lengths of time. Enhancement of oxidation by the presence of germanium; Rejection of germanium; Piling up of germanium at the interface between the growing SiO2 and the remaining...

  • Magnetron-assisted deposition of thin (SiC)1-x(AlN)x alloy films. Gusejnov, M. K.; Kurbanov, M. K.; Bilalov, B. A.; Safaraliev, G. K. // Semiconductors;Jun2010, Vol. 44 Issue 6, p812 

    The results of theoretical estimations of important parameters of the process of magnetron-assisted sputtering are reported. The parameters are the extent of the zone of thermalization of atoms and the distance from the target to the conditional anode. The method of magnetron-assisted sputtering...

  • Stress-induced transformation behaviors at low temperatures in Ti-51.8Ni (at. %) shape memory alloy. Niitsu, K.; Omori, T.; Kainuma, R. // Applied Physics Letters;6/10/2013, Vol. 102 Issue 23, p231915 

    Martensitic transformation behaviors at low temperatures in polycrystalline Ti-51.8Ni (at. %) alloy were investigated with compressive stress. Superelasticity with almost complete shape recovery was confirmed at temperatures of 40-180 K. In stress-induced transformation at fixed temperatures,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics