Optical and electrical properties of polycrystalline silicon–germanium thin films prepared by aluminum-induced layer exchange

Gjukic, M.; Lechner, R.; Buschbeck, M.; Stutzmann, M.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062115
Academic Journal
Large-grained polycrystalline silicon–germanium (poly-Si1-xGex) thin films have been obtained by the aluminum-induced layer exchange (ALILE) process. The optical and electrical properties of these layers have been investigated as a function of the alloy composition. Optical reflection spectra and Hall effect mobility measurements indicate a high structural quality of the recrystallized thin films, which is comparable to bulk crystalline silicon–germanium (c-Si1-xGex) samples prepared by more sophisticated methods. Due to the increasing solubility of aluminum as a substitutional shallow acceptor with increasing germanium content, the room temperature carrier density of holes is found to increase from 1.5×1018 cm-3 in poly-Si to 5×1020 cm-3 in poly-Ge produced by ALILE.


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