Long spin relaxation in self-assembled InAlAs quantum dots observed by heterodyne four-wave mixing

Watanuki, T.; Adachi, S.; Sasakura, H.; Muto, S.
February 2005
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p063114
Academic Journal
Exciton spin relaxation in self-assembled InAlAs quantum dots was investigated by three-pulse four-wave mixing under resonant conditions. The concept of the spin grating holds well for quantum dots and the measurements combined with optical heterodyne detection at 10 K demonstrates that the exciton spin relaxation lasts up to a few nanoseconds and the time constant is ∼5 times larger than the exciton recombination time on average.


Related Articles

  • Single-dot optical emission from ultralow density well-isolated InP quantum dots. Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatüre, M. // Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p143111 

    We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a...

  • Quantum dot-like effect in InGaAs/GaAs quantum well. Abdellatif, M.H.; Song, J.D.; Choi, W.J.; Cho, N.K.; Lee, J.I. // European Physical Journal - Applied Physics;Aug2011, Vol. 55 Issue 2, pN.PAG 

    In0.18 Ga0.82As/GaAs quantum well sample is prepared by molecular beam epitaxy. The integrated photoluminescence dependence on the excitation power intensity is studied. The critical exciton temperature is found to be around 210 K. The high critical exciton temperature is due to the increased...

  • Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy. Martín Muñoz, T.; Shiping Guo, T.; Xuecong Zhou; Tamargo, Maria C.; Huang, Y. S.; Trallero-Giner, C.; Rodríguez, A. H // Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4399 

    The interband transitions of a capped CdSe quantum-dot structure have been investigated using contactless electroreflectance. The electroreflectance spectrum shows transitions originating from all the portions of the sample including the quantum dots and the wetting layer. The transitions of the...

  • Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy. Singha, R. K.; Manna, S.; Das, S.; Dhar, A.; Ray, S. K. // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233113 

    We report on the observation of intraband near infrared (∼3.1 μm) and mid infrared (∼6.2 μm) photocurrent response at room temperature using Ge/Si self-assembled quantum dots grown by molecular beam epitaxy. Due to the bimodal size distribution and SiGe intermixing,...

  • Demonstration of nanophotonic NOT gate using near-field optically coupled quantum dots. Kawazoe, T.; Kobayashi, K.; Akahane, K.; Naruse, M.; Yamamoto, N.; Ohtsu, M. // Applied Physics B: Lasers & Optics;Jul2006, Vol. 84 Issue 1/2, p243 

    We propose and demonstrate the operation of a nanometric optical NOT gate using CuCl quantum dots coupled via an optical near-field interaction. The device was smaller than 20 nm and its repeated operation was verified. The operating energy of this device was much lower than that of a...

  • Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices. Ohtomo, A.; Tamura, K.; Kawasaki, M.; Makino, T.; Segawa, Y.; Tang, Z. K.; Tang, Z.K.; Wong, G. K. L.; Wong, G.K.L.; Matsumoto, Y.; Koinuma, H. // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    We report on the observation of stimulated emission in ZnO/Mg[sub x]Zn[sub 1-x]O superlattices well above room temperature. Two kinds of superlattices grown by laser molecular-beam epitaxy showed clear systematics on the quantum subband levels in absorption and spontaneous emission spectra....

  • Some aspects of exciton thermal exchange in InAs quantum dots coupled with InGaAs/GaAs quantum wells. Torchynska, T. V. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p074315 

    Photoluminescence (PL), its temperature and excitation power dependences, and PL excitation spectra have been investigated in InAs quantum dots (QDs) embedded in In0.15Ga0.85As/GaAs quantum wells (QWs) as a function of QD density. The QD density varied from 1.1×1011 down to 1.3×1010 cm-2...

  • Controlling magnetic moment and its fluctuations in individual semimagnetic quantum dots with different exchange interactions. Dorozhkin, P. S.; Kulakovskii, V. D.; Chernenko, A. V.; Brichkin, A. S.; Ivanov, S. V.; Toropov, A. A. // Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062507 

    The influence of exchange interaction between exciton and magnetic impurity spins on magnetic moment and its fluctuations in semimagnetic quantum dots has been investigated with the use of individual dot magnetophotoluminescence technique. In quantum dots with strong exchange interaction, both...

  • Optical Properties of CdTe QDs Formed Using Zn Induced Reorganization. Kobak, J.; Pacuski, W.; Jakubczyk, T.; Kazimierczuk, T.; Golnik, A.; Frank, K.; Rosenauer, A.; Kruse, C.; Hommel, D.; Gaj, J. A. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p627 

    In this paper we present optical studies of CdTe quantum dots formed using Zn-induced reorganization. The pattern of quantum dot photoluminescence lines is found to be similar to typical results reported for quantum dots grown with other techniques, although the positively charged exciton line...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics