TITLE

Fabrication and photoluminescence properties of porous CdSe

AUTHOR(S)
Tiginyanu, I. M.; Monaico, E.; Ursaki, V. V.; Tezlevan, V. E.; Boyd, Robert W.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p063115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the results of a study of the growth of pores in n-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution of the material under in situ UV illumination proves to result in uniform distribution of pores stretching perpendicularly to the initial surface of the specimen. The porous structures exhibit less luminescence than the bulk samples. These results pave the way for cost-effective manufacturing of CdSe-based semiconductor nanotemplates for nanofabrication.
ACCESSION #
16345420

 

Related Articles

  • Inherent excitonic luminescence in metal halide promising for potential applications in light-emitting devices. Kondo, S.; Ohsawa, H.; Asada, H.; Saito, T. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103526-1 

    So far, excitonic luminescence in metal halide (MH) has extensively been studied by many workers, with the interest not only in physics of excitons but also in its possible application in optoelectronics. In the actual MHs, however, excitonic luminescence is so weak that it is beyond the scope...

  • Conversion of infrared radiation into visible emission in YVO4 crystals doped with ytterbium and holmium. Lisiecki, R.; Dominiak-Dzik, G.; Ryba-Romanowski, W.; Lukasiewicz, T. // Journal of Applied Physics;12/1/2004, Vol. 96 Issue 11, p6323 

    Conversion of the infrared (IR) radiation at 975 nm into the visible emission in the Czochralski grown YVO4 crystals containing several different concentrations of Yb3+ and Ho3+ has been investigated. Unlike other matrices doped with ytterbium and holmium, the YVO4:Yb,Ho system exhibits intense...

  • Uniform and high-quality submicrometer tubes of GaS layered crystals. Hu, J. Q.; Bando, Y.; Zhan, J. H.; Liu, Z. W.; Golberg, D. // Applied Physics Letters;10/10/2005, Vol. 87 Issue 15, p153112 

    GaS, group III–VI semiconductor compound, is known to possess a layered structure. In this letter, uniform and high-quality GaS submicrometer tubes have been synthesized via a simple high-temperature thermal reaction route. Each GaS tube is uniform in size, and has length up to tens of...

  • Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78/p-InAs heterostructures with a high-mobility electron channel at the interface. Oswald, J.; Pangrác, J.; Hulicius, E.; Šimeček, T.; Moiseev, K. D.; Mikhailova, M. P.; Yakovlev, Yu. P. // Journal of Applied Physics;10/15/2005, Vol. 98 Issue 8, p083512 

    Ga0.84In0.16As0.22Sb0.78 quaternary solid solutions, lattice matched to InAs, were grown by liquid phase epitaxy on (100)-oriented p-InAs substrates from In-rich melt. The p-type Ga0.84In0.16As0.22Sb0.78 layers were intentionally undoped or slightly doped with Sn to the hole concentration about...

  • Investigations on the morphology, optical and photoresponse properties of PbS/CdS binary colloidal quantum dot thin film. He, Jungang; Yu, Yan; Zhang, Ling; Yi, Jinqiao; Liu, Sisi; Kan, Hao; Zhang, Guangzu; Jiang, Shenglin // Journal of Materials Science: Materials in Electronics;Jun2014, Vol. 25 Issue 6, p2516 

    Binary thin film exhibits not only the quantum features of the individual building blocks but also novel collective properties through coupling of colloidal quantum dot components. In this paper, lead sulfide (PbS) and cadmium sulfide (CdS) colloidal quantum dots (CQDs) were synthesized by using...

  • Impurity absorption and luminescence of CuGaSe2 crystals. Ponomareva, I. A.; Serov, A. Yu.; Bodnar', I. V. // Physics of the Solid State;Jan2007, Vol. 49 Issue 1, p23 

    A comparison of the experimental and calculated absorption spectra of CuGaSe2 crystals revealed the existence of two acceptor levels with ionization energies of 66 and 167 meV in the samples under study. It was found that the luminescence spectra of CuGaSe2 measured at 77 K exhibit four...

  • Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon. Bresler, M. S.; Gusev, O. B.; Sobolev, N. A.; Terukov, E. I.; Yassievich, I. N.; Zakharchenya, B. P.; Gregorkevich, T. // Physics of the Solid State;May99, Vol. 41 Issue 5, p770 

    A short review is presented of the erbium-ion excitation mechanisms in crystalline and amorphous silicon and of the processes governing thermal quenching of erbium luminescence in these materials, which draws both from the studies carried out by the present authors and from available literature...

  • Evaluation of erbium-doped silicon for optoelectronic applications. Xie, Y. H.; Fitzgerald, E. A.; Mii, Y. J. // Journal of Applied Physics;9/15/1991, Vol. 70 Issue 6, p3223 

    Presents evaluations of erbium-doped silicon (EDS) for optoelectronic applications. Explanation for the unsuitability of EDS in light-emitting-diode applications; Factor which increased the significance of silicon to the semiconductor industry; Discussion on rare-earth luminescence; Application...

  • Coefficients of Capture of Free Excitons by Shallow Acceptors and Donors in Gallium Arsenide. Glinchuk, K. D.; Litovchenko, N. M.; Strilchuk, O. N. // Semiconductors;May2004, Vol. 38 Issue 5, p543 

    The excitonic luminescence spectra of semi-insulating GaAs crystals with various concentrations of shallow acceptors (C) and donors (Si) were measured at 4.2 K. An analysis of these spectra made it possible to determine the coefficients of capture of free excitons by shallow neutral acceptors...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics