TITLE

Extended defects in epitaxial Sc2O3 films grown on (111) Si

AUTHOR(S)
Klenov, Dmitri O.; Edge, Lisa F.; Schlom, Darrell G.; Stemmer, Susanne
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p051901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial Sc2O3 films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc2O3 and Si. The ∼10% lattice mismatch between Si and Sc2O3 was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2,〈 &1macr;10〉Si and line directions parallel to 〈11&2macr;&rangSi. A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice.
ACCESSION #
16345411

 

Related Articles

  • Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates. Wang, X.; Chang, Y.; Becker, C.; Grein, C.; Sivananthan, S.; Kodama, R. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1860 

    The interface of ZnTe/Si(211) grown by molecular beam epitaxy was investigated by high-resolution transmission electron microscopy. Several types of defects such as misfit dislocations, stacking faults, agglomerations of vacancies, and precipitates were observed and studied by electron...

  • Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers. Markunas, J.; Jacobs, R.; Smith, P.; Pellegrino, J. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1809 

    Reduction of threading dislocation density is critical for improving the performance of HgCdTe detectors on lattice-mismatched alternative substrates such as Si. CdTe buffer layers grown by molecular beam epitaxy (MBE), with thicknesses on the order of 8 μm to 12 μm, have helped reduce...

  • Deep level defects in Si-doped AlxGa1-xN films grown by molecular-beam epitaxy. Park, Y. S.; Park, C. J.; Park, C. M.; Na, J. H.; Oh, J. S.; Yoon, I. T.; Cho, H. Y.; Kang, T. W.; Oh, Jae-Eung // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152109 

    The deep trap levels of AlxGa1-xN films with x in the range from 0 to 0.15 grown on c-plane sapphire substrates using rf-plasma-assisted molecular-beam epitaxy have been investigated by deep level transient spectroscopy measurements. Two distinct defect levels (denoted as Ei and Di) were...

  • Strain effects in ZnO layers deposited on 6H-SiC. Ashrafi, A. B. M. A.; Segawa, Y.; Shin, K.; Yao, T. // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p063523 

    Correlation in crystallite sizes and defects of epitaxial ZnO layers deposited on 6H-SiC substrates has been addressed. The biaxial strain governs the ZnO crystallites for the layer thickness of ∼400 nm. The misfit dislocations were observed in nucleation and theater is the columnar growth...

  • Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy. Noda, K.; Terai, Y.; Hashimoto, S.; Yoneda, K.; Fujiwara, Y. // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p241907 

    Modifications of direct transition energies by crystal lattice deformations were confirmed in β-FeSi2 epitaxial films on Si(111) substrates. With an increasing of annealing temperature (Ta), lattice constants of a-axis expanded, and those of b- and c-axis shrank, resulting in the volume...

  • Lattice dilation by free electrons in heavily doped GaAs:Si. Leszczynski, M.; Bak-Misiuk, J. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p539 

    Examines lattice dilation by free electrons in doped gallium arsenide (GaAs) layers grown on silicon substrates through molecular beam epitaxy. Increase in lattice constants of GaAs layers; Effects of silicon atoms on lattice constants; Nonexistence of concentration defects causing lattice...

  • Molecular Beam Epitaxy Growth and Optical Characterization of AlxIn1-xSb/GaAs Heterostructures. Komkov, O. S.; Firsov, D. D.; Pikhtin, A. N.; Semenov, A. N.; Meltser, B. Ya.; Solov'ev, V. A.; Ivanov, S. V. // AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p184 

    Optical properties of AlxIn1-xSb semiconductor alloys with x varied in the range x = 0-0.52 were explored. The alloy layers were grown by molecular beam epitaxy on highly lattice-mismatched GaAs substrates, mediated by thick AlSb buffer layers and strained Insb/AlxIn1-xSb superlattices to reduce...

  • Molecular beam epitaxial growth of Al[sub x]Ga[sub 1-x]As (x=0.2-0.7) on (111)B-GaAs using.... Hayakawa, T.; Nagai, M.; Morishima, M.; Horie, H.; Matsumoto, K. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2287 

    Examines the basic properties of Al[sub x]Ga[sub 1-x]As semiconductor films grown by molecular beam epitaxy. Dependence of surface morphology on arsenic species; Association of photoluminescence (PL) with defects; Comparison between the PL intensity of As[sub 2] and As[sub 4].

  • Electrical properties of low-temperature-growth CaF[sub 2] on Si(111). Cho, C.-C.; Kim, T.S. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p338 

    Examines the growth of low temperature-epitaxial calcium fluoride (CaF[sub 2]) films on silicon using molecular beam epitaxy. Observation of x-ray rocking curves of CaF[sub 2] in CaF[sub 2]/Si samples; Influence of thermal history on CaF[sub 2] capacitor; Predominance of Ca-Si bonds in CaF[sub...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics