Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

Frazier, R. M.; Thaler, G. T.; Leifer, J. Y.; Hite, J. K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p052101
Academic Journal
AlCrN layers were grown by gas source molecular beam epitaxy with varying amounts of Cr (up to ∼3 at. %) under a broad range of Cr cell temperatures and V/III ratio. Magnetic measurements performed in a superconducting quantum interference device magnetometer showed evidence of ferromagnetism up to 350 K in single phase material. Magnetization dependence on dopant cell temperature and V/III was used to optimize the growth conditions of the AlCrN layers. The single-phase material was highly insulating (∼1010 Ω cm), while the material containing second phases (predominantly Cr2N and AlxCry) was conducting with resistivity of order 1000 Ω cm. High resolution x-ray diffraction rocking curves indicated high crystalline quality in the single phase material.


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