Room temperature ferromagnetic n-type semiconductor in (In1-xFex)2O3-σ

Jun He; Shifa Xu; Yoo, Young K.; Qizhen Xue; Hyung-Chul Lee; Shifan Cheng; Xiang, X.-D.; Dionne, Gerald F.; Takeuchi, Ichiro
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p052503
Academic Journal
The thin film synthesis and characterization of room temperature ferromagnetic semiconductor (In1-xFex)2O3-σ are reported. The high thermodynamic solubility, up to 20%, of Fe ions in the In2O3 is demonstrated by a combinatorial phase mapping study where the lattice constant decreases almost linearly as Fe doping concentration increases. Extensive structural, magnetic and magneto-transport including anomalous Hall effect studies on thin film samples consistently point to a source of magnetism within the host lattice rather than from an impurity phase.


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