Ion-implantation-prepared catalyst nanoparticles for growth of carbon nanotubes

Adhikari, A. R.; Huang, M. B.; Wu, D.; Dovidenko, K.; Wei, B. Q.; Vajtai, R.; Ajayan, P. M.
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p053104
Academic Journal
This letter demonstrates the use of catalyst nanoparticles prepared by ion implantation for growth of carbon nanotubes (CNTs) via chemical vapor deposition. Nickel ions of energy in 100 keV were first implanted at room temperature into silicon dioxide to doses of 1015–1017 cm-2. Postimplantation annealing was conducted to induce precipitation of implanted Ni atoms into nanoparticles. The samples were chemically etched to expose Ni nanoparticles on the surface. Finally, CNT growth on such prepared SiO2 substrates was achieved via chemical vapor deposition through decomposition of hydrocarbon. Our data show strong correlation in the size of resultant tube structures and preformed catalyst nanoparticles, with larger Ni nanoparticles resulting in larger tube diameters. This work may provide an effective way for seeding catalyst nanoparticles in high-aspect-ratio via/trench structures for growing CNTs for interconnect applications.


Related Articles

  • Ion implantation effect on Resonance Raman spectroscopy of double-wall carbon nanotubes. Moreira, E. C.; Saraiva, G. D.; Filho, A. G. Souza; Braunstein, G.; Muramatsu, H.; Kim, Y. A.; Endo, M.; Dresselhaus, M. S. // AIP Conference Proceedings;8/6/2010, Vol. 1267 Issue 1, p469 

    The article presents a research which examines the effects of bombarding a highly pure, double wall carbon nanotubes (DWNTs) structure with ions, using Resonance Raman Spectroscopy (RRS). The research concludes that, outer nanotubes are more affected than the inner nanotubes by the ion...

  • Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers. Jambois, O.; Carreras, Josep; Pérez-Rodríguez, A.; Garrido, B.; Bonafos, C.; Schamm, S.; Assayag, G. Ben // Applied Physics Letters;11/19/2007, Vol. 91 Issue 21, p211105 

    White and tunable electroluminescence has been obtained by field effect injection in 40 nm thick Si- and C-rich SiO2 layers. The films, synthesized by ion implantation, contain Si and C-rich nanoparticles embedded in SiO2 which were formed by annealing at 1100 °C. Shifting of the distribution...

  • Influence of pressure and ion bombardment on the growth and properties of nanocrystalline silicon materials. Dalal, Vikram L.; Graves, Joshua; Leib, Jeffrey // Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1413 

    We report on the growth and properties of nanocrystalline silicon:H films deposited using plasma discharge at 45 MHz under varying pressure regimes from 50 to 500 mTorr. X-ray diffraction data revealed that the primary orientation in these films was <111>. The amount of hydrogen dilution needed...

  • Evidence for a “dark exciton” state of PbS nanocrystals in a silicate glass. Espiau de Lamaëstre, R.; Bernas, H.; Pacifici, D.; Franzó, G.; Priolo, F. // Applied Physics Letters;5/1/2006, Vol. 88 Issue 18, p181115 

    PbS nanocrystals (diameter of 5–7 nm) were synthesized via sulfur ion implantation in Pb-based glasses and postannealing. They display strong emission at around 1.5 μm due to quantum confinement, and a very large photoluminescence (PL) excitation cross section. The PL intensity and...

  • Tailoring structure and electrical properties of carbon nanotubes using kilo-electron-volt ions. Wei, B.Q.; D'Arcy-Gall, J.; Ajayan, P.M.; Ramanath, G. // Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3581 

    We report the effects of 30 and 50 keV Ga[sup +] ion irradiation on the structure and electrical properties of arc-evaporated multiwalled carbon nanotubes (MWNTs). For 50 keV ions with doses of ∼10[sup 13] ions/cm[sup 2] the outer shells of the MWNTs remain intact, while the inner layers...

  • Thin organic films produced by ion implantation. Calcagno, L.; Sheng, K. L.; Torrisi, L.; Foti, G. // Applied Physics Letters;1984, Vol. 44 Issue 8, p761 

    Ion bombardment of frozen benzene produces a polymeric film, the thickness of which can be controlled by changing the energy (30-100 keV) of the incoming helium beam. IR spectra and proton scattering analysis show that basic components of the film are hydrogen and carbon in the elemental ratio...

  • Damage effects produced in the near-surface region of x-cut LiNbO3 by low dose, high energy implantation of nitrogen, oxygen, and fluorine ions. Bentini, G.G.; Bianconi, M.; Correra, L.; Chiarini, M.; Mazzoldi, P.; Sada, C.; Argiolas, N.; Bazzan, M.; Guzzi, R. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p242 

    The damage effects produced in the near-surface region of x-cut LiNbO3 by low dose, high energy implantation of carbon, nitrogen, oxygen, and fluorine ions are investigated as a function of the dose and substrate temperature during the implant process. The damage profiles were obtained by the...

  • Ion-beam annealing of electron traps in n-type Si by post-H+ implantation. Ito, A.; Tokuda, Y. // Journal of Applied Physics;8/1/1997, Vol. 82 Issue 3, p1053 

    Studies the effects of post-hydrogen ion implantation on electron traps that are induced by potassium ion implantation using deep-level transient spectroscopy. Change of electron traps; Depth profiles of trap concentrations; Ion-beam-annealing efficiency profiles.

  • A very large Paul trap ion gun for delivering bunched low energy ion beams. Ghalambor-Dezfuli, A. M.; Moore, R. B.; Schwartz, Stefan // Review of Scientific Instruments;Feb2002, Vol. 73 Issue 2, p685 

    Ions extracted from mass separators normally have energies in the range of tens of kilovolts and poor emittances, and are thereby not suited for soft landing, especially in ion deposition applications. In this article a system is described that has been developed for in-flight capture of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics