1.28 μm lasing from stacked InAs/GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition

Tatebayashi, Jun; Hatori, Nobuaki; Ishida, Mitsuru; Ebe, Hiroji; Sugawara, Mitsuru; Arakawa, Yasuhiko; Sudo, Hisao; Kuramata, Akito
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p053107
Academic Journal
We report the device characteristics of stacked InAs/GaAs quantum-dot lasers cladded by Al0.4Ga0.6As layer grown at a low temperature by metalorganic chemical vapor deposition. A blueshift in emission energy by the effect of postgrowth annealing can be suppressed when the annealing temperature is below 570 °C. We achieved the 1.28 μm continuous-wave lasing at room temperature of five layer stacked InAs/GaAs quantum dots embedded in In0.13Ga0.87As strain-reducing layer whose p-cladding layer is grown at 560 °C. From the experiments and calculations of the gain spectra of fabricated quantum-dot lasers, the observed lasing originates from the first excited state of stacked InAs quantum dots.


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