Fe-implanted InGaAs terahertz emitters for 1.56 μm wavelength excitation

Suzuki, Masato; Tonouchi, Masayoshi
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p051104
Academic Journal
We have measured the terahertz (THz) radiations from unimplanted and Fe-implanted In0.53Ga0.47As photoconductive switches excited by the femtosecond laser pulse of 1.56 μm wavelength. It has been also observed that the amplitude of the radiated wave form from these photoswitches deviates from linear behavior, and saturates with increase in the power of excitation pulse. Fe implantation to the samples leads to about 1.2 times decrease in the pulse width of radiated THz wave form and 6.5 times reduction in the carrier mobility compared to the unimplanted sample.


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