Group-V intermixing in InAs/InP quantum dots

Chia, C. K.; Chua, S. J.; Tripathy, S.; Dong, J. R.
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p051905
Academic Journal
Postgrowth intermixing in InAs/InP quantum dot (QD) structures have been investigated by rapid thermal annealing and laser irradiation techniques. In both cases, room-temperature photoluminescence (PL) measured from the QD structures after intermixing shows a substantial blueshift accompanied by an improvement in PL intensity and a reduction in linewidth. In the case of impurity free vacancy disordering, an energy shift of up to 350 meV has been achieved. The maximum differential energy shift for samples capped with SiO2 and SiNx dielectrics was found to be 90 meV. On the other hand, laser-induced intermixing allows differential energy shifts of more than 250 meV in this material system. Micro-Raman measurement shows the appearance of InAs-type and InP-type optical phonon peaks from laser-annealed InAs/InP QDs due to the exchange of As and P at the QD interfaces.


Related Articles

  • Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing. Young Min Park; Young Ju Park; Kwang Moo Kim; Jin Dong Song; Jung II Lee; Keon-Ho Yoo; Hyung Seok Kim; Chan Gyung Park // Journal of Applied Physics;11/15/2004, Vol. 96 Issue 10, p5496 

    Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a...

  • Effects of grown-in defects on interdiffusion dynamics in InAs/InP(001) quantum dots subjected to rapid thermal annealing. Dion, C.; Desjardins, P.; Shtinkov, N.; Schiettekatte, F.; Poole, P. J.; Raymond, S. // Journal of Applied Physics;Apr2008, Vol. 103 Issue 8, p083526 

    This work investigates the interdiffusion dynamics in self-assembled InAs/InP(001) quantum dots (QDs) subjected to rapid thermal annealing in the 600–775 °C temperature range. We compare two QD samples capped with InP grown at either optimal or reduced temperature to induce grown-in...

  • Sensitivity of exciton spin relaxation in quantum dots to confining potential. Mackowski, S.; Gurung, T.; Jackson, H. E.; Smith, L. M.; Heiss, W.; Kossut, J.; Karczewski, G. // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103101 

    We observe a strong dependence of the exciton spin relaxation in CdTe quantum dots on the average dot size and the depth of the confining potential. After rapid thermal annealing, which increases the average dot size and leads to weaker confinement, we measure the spin relaxation time of the...

  • Neutral ion-implantation-induced selective quantum-dot intermixing. Djie, H. S.; Ooi, B. S.; Aimez, V. // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p261102 

    High spatial band-gap tuning has been observed from an InGaAs/GaAs quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at 200 °C followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As...

  • Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. Keizer, J. G.; Henriques, A. B.; Maia, A. D. B.; Quivy, A. A.; Koenraad, P. M. // Applied Physics Letters;12/10/2012, Vol. 101 Issue 24, p243113 

    The optoelectronic properties of InAs/GaAs quantum dots can be tuned by rapid thermal annealing. In this study, the morphology change of InAs/GaAs quantum dots layers induced by rapid thermal annealing was investigated at the atomic-scale by cross-sectional scanning tunneling microscopy. Finite...

  • Tuning the emission profiles of various self-assembled InxGa1-xAs nanostructures by rapid thermal annealing. Lee, Jihoon H.; Wang, Zhiming M.; Dorogan, Vitaliy G.; Mazur, Yuiry I.; Ware, Morgan E.; Salamo, Gregory J. // Journal of Applied Physics;Oct2009, Vol. 106 Issue 7, p073106 

    Tuning the emission profiles of various novel InxGa1-xAs nanostructures, such as quantum rods, quantum dot pairs (QDPs), bridged QDPs, dimpled quantum dots (QDs), and low-temperature-capped QDs, is demonstrated by postgrowth rapid thermal annealing. Specifically, improved optical properties,...

  • Activation energy for C94 and C54 TiSi[sub 2] formation measured during rapid thermal annealing. Colgan, E.G.; Clevenger, L.A. // Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2009 

    Measures activation energies for C49 and C54 titanium disilicide formation during rapid thermal annealing. Resistivity of gate and local interconnect metallizations in integrated circuits; Measurement of temperature corresponding to a fixed stage of transformation; Evaporation of titanium films...

  • Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma. Nie, D.; Mei, T.; Djie, H. S.; Ooi, B. S.; Zhang, X. H. // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p251102 

    The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak...

  • Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors. Kim, D. Y.; Kim, G. S.; Jeon, S. M.; Cho, M. Y.; Choi, H. Y.; Kim, M. S.; Lee, D.-Y.; Kim, J. S.; Eom, G.-S.; Leem, J.-Y. // Acta Physica Polonica, A.;Jun2010, Vol. 117 Issue 6, p941 

    Multi-stacked InAs QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers, the PL intensity is enhanced about 4.7 times...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics