TITLE

Shock induced amorphization as the onset of spall

AUTHOR(S)
Ashkenazy, Yinon; Averback, Robert S.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p051907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Spall formation in the glass-forming alloy Cu–Ti was studied via molecular dynamics simulations. It is shown that spall initiation is a combined process where void nucleation is accompanied by local amorphization. The amorphous regions nucleate at the surfaces of the voids at a critical stress and then grow, allowing the voids to grow faster in the mechanically less stable amorphous region. Dislocations are emitted from the amorphous regions and form shear bands between the amorphous regions. Subspall events result in the formation of a damaged layer, including voids, amorphous regions, and shear bands. The simulations are consistent with recent experimental observation of intergranular amorphous bands in shocked boron carbide.
ACCESSION #
16345373

 

Related Articles

  • Modeling of hydrophilic wafer bonding by molecular dynamics simulations. Litton, David A.; Garofalini, Stephen H. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6013 

    The role of moisture in hydrophilic wafer bonding was modeled using molecular dynamics computer simulations of interface formation between amorphous silica surfaces. Three different surface treatments were used in order to determine the effect of moisture on the formation of siloxane (Si-O-Si)...

  • Microscopic nature of Staebler-Wronski defect formation in amorphous silicon. Biswas, R.; Pan, B. C. // Applied Physics Letters;1/19/1998, Vol. 72 Issue 3 

    Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H[sub 2][sup *] defect in c-Si and...

  • Infrared absorption in amorphous silicon from ab initio molecular dynamics. Debernardi, Alberto; Bernasconi, Marco // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2692 

    Investigates the ab initio molecular dynamics of infrared (ir) absorption in amorphous silicon. Use of the Berry phase formulation; Analysis of time evolution of the system using Car-Parrinello molecular dynamics; Quantitative agreement of the study with empirical calculations based on a...

  • Computer study of physical properties of silicon nanostructures. Galashev, A. E.; Izmodenov, I. A.; Novruzov, A. N.; Novruzova, O. A. // Semiconductors;Feb2007, Vol. 41 Issue 2, p190 

    The method of molecular dynamics is applied to the study of variations in the physical properties of vitreous and amorphous silicon nanoparticles when heated from 300 to 1700 K. The nanoparticles consist of 300, 400, and 500 atoms. The energy and the average length of the Si-Si bond are...

  • Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects. Lampin, E.; Krzeminski, C. // Journal of Applied Physics;Sep2009, Vol. 106 Issue 6, p063519-1 

    The solid phase epitaxy of an amorphous layer on crystalline silicon is studied by means of molecular dynamics. Three stacks of 5120, 4928, and 5184 atoms respectively oriented along the [100], [110], and [111] directions are annealed with the Tersoff interatomic potential. The regrowth proceeds...

  • Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4. Hyeon-Kyun Noh; Byungki Ryu; Eun-Ae Choi; Junhyeok Bang; K. J. Chang // Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p082905 

    We perform first-principles calculations to investigate the defect properties of O vacancies in amorphous HfSiO4. For atomic models generated from molecular dynamics simulations, we find that O vacancies, which have only Hf atoms or a mixture of Hf and Si in the neighborhood, behave as charge...

  • Molecular dynamics simulations of atomic-level brittle fracture mechanisms in amorphous silica. Muralidharan, Krishna; Ki-Dong Oh; Deymier, P. A.; Runge, K.; Simmons, J. H. // Journal of Materials Science;Jun2007, Vol. 42 Issue 12, p4159 

    We have examined the atomic dynamics of the brittle fracture process in amorphous silica using molecular dynamics. Under strain, extensive atomic restructuring occur in the vicinity of voids leading to the formation of 2-membered (2-M) silica rings that are much different than the open network...

  • Classical Molecular Dynamics Study On Crystallization Of Amorphous Silicon. Shanavas, K. V.; Ojha, Udbhav; Garg, Nandini; Sharma, Surinder M. // AIP Conference Proceedings;12/1/2010, Vol. 1313 Issue 1, p382 

    Crystallization of amorphous silicon to diamond structure under high pressures is studied with the help of classical molecular dynamics simulations, for the first time. We find that, as pressure is increased, the crystallization temperature decreases up to 10 GPa and then begins to increase....

  • Mechanisms of ion beam mixing in metals and semiconductors. Nordlund, K.; Ghaly, M.; Averback, R. S. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1238 

    Presents a study which investigated ion beam mixing in crystalline and amorphous semiconductors and metals. Information on the molecular dynamics simulations used to conduct the investigation; Comparison of the magnitude of mixing in an amorphous element to its crystalline counterpart;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics