Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Kumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p052105
Academic Journal
We investigated the minority carrier diffusion length in p- and n-GaN by performing electron-beam-induced current measurements of GaN p–n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg doping concentration for relatively low dislocation density below 108 cm-2. It increased from 220 to 950 nm with decreasing Mg doping concentration from 3×1019 to 4×1018 cm-3. For relatively high dislocation density above 109 cm-2, it was less than 300 nm and independent of the Mg doping concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250 nm and less affected by the dislocation density and Si doping concentration. We discuss the doping-concentration and dislocation-density dependence of minority carrier diffusion length.


Related Articles

  • Degenerate p-doping of InP nanowires for large area tunnel diodes. Wallentin, Jesper; Wickert, Peter; Ek, Martin; Gustafsson, Anders; Reine Wallenberg, L.; Magnusson, Martin H.; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T. // Applied Physics Letters;12/19/2011, Vol. 99 Issue 25, p253105 

    We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel...

  • Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation. Goodman, S. A.; Auret, F. D.; Meyer, W. E. // Journal of Applied Physics;1/15/1994, Vol. 75 Issue 2, p1222 

    Presents information on a study that irradiated epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with alpha particle at room temperature using an americium-241 radio nuclide. Experiment details; Result and discussion.

  • Studies of minority carrier diffusion length increase in p-type ZnO:Sb. Lopatiuk-Tirpak, O.; Chernyak, L.; Xiu, F. X.; Liu, J. L.; Jang, S.; Ren, F.; Pearton, S. J.; Gartsman, K.; Feldman, Y.; Osinsky, A.; Chow, P. // Journal of Applied Physics;10/15/2006, Vol. 100 Issue 8, p086101 

    Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184±10 meV. Irradiation with a low...

  • Impulse Response of a Heterojunction MSM Photodiode. Averine, S.V. // Technical Physics;Jun2004, Vol. 49 Issue 6, p715 

    A two-dimensional model is used to simulate drift of photogenerated carriers in the active region of high-speed photodiodes (metal–semiconductor–metal (MSM) rectifying contacts) that are made as a conventional planar structure and a structure with a heterojunction. These two types...

  • Graphene nanoribbons: Chemical stitching. Wang, Xinran // Nature Nanotechnology;Nov2014, Vol. 9 Issue 11, p875 

    The article discusses research efforts in graphene-based electronics and the graphene field-effect which is inefficient in digital application. It mentions graphene being sliced into nanoribbons to overcome bandgap is suitable for most logic applicatons. Topics include heterojunctions,...

  • Electron-beam induced variation of surface profile in amorphous As20Se80 films. Kaganovskii, Yu.; Trunov, M. L.; Cserhati, C.; Lytvyn, P. M.; Beke, D. L.; Kökényesi, S. // Journal of Applied Physics;2014, Vol. 116 Issue 1, p183512-1 

    Unusual profile variation of holographic surface relief gratings is detected in thin (2 μm) As20Se80 chalcogenide films under e-beam irradiation: gratings of small periods were smoothed, whereas the gratings of larger periods increased their amplitudes. Irradiation was carried out in SEM,...

  • Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles. Wang, Yin; Zahid, Ferdows; Zhu, Yu; Liu, Lei; Wang, Jian; Guo, Hong // Applied Physics Letters;4/1/2013, Vol. 102 Issue 13, p132109 

    Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0

  • Hole transport and carrier lifetime in InN epilayers. Fei Chen; Cartwright, A. N.; Hai Lu; Schaff, William J. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212104 

    Time-resolved transient grating spectroscopy has been conducted to measure the ambipolar diffusion coefficient and to derive the hole mobility and carrier lifetime in an InN epilayer simultaneously. The ambipolar diffusion coefficient Da=2.0 cm2/s, hole mobility μh=39 cm2/V s, and carrier...

  • Silver distribution in wet-sensitized As10Ge22.5Se67.5 films after electron beam exposure. Liang, Yong-Cheng; Tada, Kunio // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1378 

    Presents a study which examined the exposure characteristics of silver doping due to electron beam exposure. Similarities between photodoping and electron-beam-induced silver doping; Experimental details; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics