TITLE

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

AUTHOR(S)
Kumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p052105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the minority carrier diffusion length in p- and n-GaN by performing electron-beam-induced current measurements of GaN p–n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg doping concentration for relatively low dislocation density below 108 cm-2. It increased from 220 to 950 nm with decreasing Mg doping concentration from 3×1019 to 4×1018 cm-3. For relatively high dislocation density above 109 cm-2, it was less than 300 nm and independent of the Mg doping concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250 nm and less affected by the dislocation density and Si doping concentration. We discuss the doping-concentration and dislocation-density dependence of minority carrier diffusion length.
ACCESSION #
16345369

 

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