Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

Peng, H. Y.; Lee, C. W.; Everitt, H. O.; Lee, D. S.; Steckl, A. J.; Zavada, J. M.
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p051110
Academic Journal
Photoluminescence (PL) excitation spectroscopy mapped the photoexcitation wavelength dependence of the red luminescence (5D0→7F2) from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient energy transfer process. However, for excitation energies above or below the GaN bound exciton energy, the decaying luminescence indicates excitation wavelength- and temperature-dependent energy transfer influenced by intrinsic and Eu3+-related defects.


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