Force/displacement detection using quantum transport in InAs/AlGaSb two-dimensional heterostructures

Yamaguchi, H.; Hirayama, Y.; Miyashita, S.; Ishihara, S.
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p052106
Academic Journal
We fabricated a piezoresistive microelectromechanical cantilever that contains an InAs/Al0.5Ga0.5Sb quantum well and measured the piezoresistance as a function of perpendicular magnetic field at 2.0 K. The magneto-piezoresistance shows the feature of Schvnikov-de Haas oscillation, indicating a strong quantum effect on the piezoresistance. At the magnetic field that gives the largest piezoresistance, displacement and force sensitivities of 10-11 m/√Hz and 10-12N/√Hz, respectively, were obtained.


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