Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence

Glaser, E. R.; Shanabrook, B. V.; Carlos, W. E.
January 2005
Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p052109
Academic Journal
The conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark. The ratio of the nitrogen-bound exciton line (Q0) to the free excitonic-related emission (I77) was tracked as a function of excitation power density for a set of samples with varying residual N concentration (∼6×1014–5.2×1016 cm-3) as determined by secondary ion mass spectroscopy. A linear relationship was empirically found between the Q0/I77 ratio and [N] for [N]<1×1016 cm-3. However, a sub-linear behavior was observed for samples with higher N levels attributed to incomplete photo-neutralization of the N shallow donors.


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