Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

Chen, X. D.; Ling, C. C.; Gong, M.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031903
Academic Journal
Deep level defects E1/E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H–SiC. Similar to others’ results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E1/E2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E1/E2. The activation energy and the capture cross section of this defect are EC-0.31 eV and σ∼8×10-14 cm2, respectively.


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