Electrical properties of polycrystalline SrSi2

Imai, Motoharu; Naka, Takashi; Furubayashi, Takao; Abe, Hideki; Nakama, Takao; Yagasaki, Katsuma
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032102
Academic Journal
The electrical properties of polycrystalline SrSi2 were examined by electrical resistivity measurements at temperatures ranging from 2 to 760 K and Hall coefficient measurements at temperatures ranging from 10 to 300 K. These measurements revealed that SrSi2 is a narrow-gap semiconductor with an energy gap of 0.035 eV whose dominant carriers are holes.


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