Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

de Boer, R. W. I.; Iosad, N. N.; Stassen, A. F.; Klapwijk, T. M.; Morpurgo, A. F.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032103
Academic Journal
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than 10-9 A/cm2. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.


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