Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Tavakoli, Shahram Ghanad; Sungkweon Baek; Hyo Sik Chang; Dae Won Moon; Hyunsang Hwang
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032104
Academic Journal
A shallow, low-resistive solid phase epitaxially regrown n+/p junction was investigated for sub-70 nm metal–oxide–semiconductor field-effect transistors (MOSFETs), using bismuth (Bi) ion-implantation and low temperature rapid thermal annealing. Bi-doped specimens showed a shallow junction depth of ∼15 nm (at a background concentration of 5×1018 cm-3), low sheet resistance, and leakage current at low temperature processing (700 °C). The results indicated that Bi could be a proper dopant for low temperature activated source and drain extensions that are fabricated at low temperatures with the implementation of high-κ dielectric and metal–electrode gate stacks in next generation MOSFETs.


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