Effect of double-sided (Pb0.72La0.28)Ti0.93O3 buffer layers on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films

Eun Sun Lee; Hyun Woo Chung; Sung Hoon Lim; Sang Yeol Lee
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032903
Academic Journal
We deposited the Pb(Zr0.52Ti0.48)O3 (PZT) thin films with single and double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffers by using a pulsed-laser deposition method. With the PLT buffer layers, the remanent polarization values increased, and a remanent polarization value of 33.4 μC/cm2 was obtained when 10-nm-thick double-sided PLT buffer layers were used. While the coercive field of films slightly increased only with a single-sided PLT buffer, it decreased again by adding the top PLT buffer layer. The film with double-sided PLT buffer also exhibited good fatigue endurance after 109 switching cycles even without oxide electrodes, mainly because the accumulated charges were compensated at the interface junction between the PLT buffer layer and the electrode.


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