Ferromagnetic Mn-doped GaN nanowires

Doo Suk Han; Jeunghee Park; Kung Won Rhie; Soonkyu Kim; Joonyeon Chang
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032506
Academic Journal
We report Mn-doped GaN nanowires exhibiting ferromagnetism even at room temperature. The growth of single-crystalline wurtzite-structured GaN nanowires doped homogeneously with about 5 at. % Mn was achieved by chemical vapor deposition using the reaction of Ga/GaN/MnCl2 with NH3. The ferromagnetic hysteresis at 5 and 300 K and the temperature-dependent magnetization curves suggest the Curie temperature around 300 K. Negative magnetoresistance of individual nanowires was observed at the temperatures below 150 K.


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