Formation and electrical properties of Ni1-xFex nanocrystals embedded in a polyimide layers for applications as nonvolatile flash memories

Kim, J. H.; Jin, J. Y.; Jung, J. H.; Lee, I.; Kim, T. W.; Lim, Sung K.; Yoon, C. S.; Kim, Y.-H.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032904
Academic Journal
Self-assembled Ni1-xFex nanoparticles embedded in a polyimide (PI) matrix were formed by curing Ni1-xFex thin films with PI precursor layers. Transmission electron microscopy images and selected area electron-diffraction patterns showed that Ni1-xFex nanocrystals were created inside the PI layer. Capacitance-voltage measurements on Al/PI/nanocrystalline Ni1-xFex/PI/n-Si structures at 300 K showed a metal-insulator-semiconductor behavior with a large flatband voltage shift due to the quantum confinement effect of the Ni1-xFex nanocrystals in spite of the possible existence of a thick tunnel PI layer, and conductance-voltage measurements showed a broad conductance peak around the flatband voltage. The present results suggest that self-assembled Ni1-xFex nanocrystals embedded in a PI layer hold promise for potential applications in nonvolatile flash memories with floating gates consisting of Ni1-xFex nanocrystals embedded in a PI layer.


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