Crack-free fully epitaxial nitride microcavity using highly reflective AlInN/GaN Bragg mirrors

Carlin, J.-F.; Dorsaz, J.; Feltin, E.; Butté, R.; Grandjean, N.; Ilegems, M.; Laügt, M.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031107
Academic Journal
We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3λ/2 GaN cavity surrounded by AlInN/GaN DBRs with reflectivities close to 99%. Reflectivity and transmission measurements were carried out on these structures, which exhibit a stopband of 28 nm. The cavity mode is clearly resolved with a linewidth of 2.3 nm. These results demonstrate that the AlInN/GaN system is very promising for the achievement of strong light–matter interaction and the fabrication of nitride-based vertical cavity surface emitting lasers.


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