Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

Xi, Y.; Xi, J.-Q.; Gessmann, Th.; Shah, J. M.; Kim, J. K.; Schubert, E. F.; Fischer, A. J.; Crawford, M. H.; Bogart, K. H. A.; Allerman, A. A.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031907
Academic Journal
The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate (±3 °C). A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6 K/W is obtained with the device mounted with thermal paste on a heat sink.


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