Role of silicon interstitials in boron cluster dissolution

Aboy, Maria; Pelaz, Lourdes; Marqués, Luis A.; López, Pedro; Barbolla, Juan; Duffy, R.; Venezia, V. C.; Griffin, Peter B.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031908
Academic Journal
We present kinetic nonlattice Monte Carlo atomistic simulations to investigate the role of Si interstitials in B cluster dissolution. We show that the presence of Si interstitials from an oxidizing anneal stabilize B clusters and slow down B cluster dissolution, compared to anneal in inert ambient. We have also analyzed the influence of injected Si interstitials from end of range defects, due to preamorphizing implants, on B deactivation and reactivation processes. We have observed that the B cluster evolution can be clearly correlated to the evolution of Si interstitial defects at the end of range. The minimum level of activation occurs when the Si interstitial supersaturation is low because the end of range defects have dissolved or reach very stable configurations, such as dislocation loops.


Related Articles

  • Multiple implantations into Si: Influence of the implantation sequence on ion range profiles. Posselt, M.; Mäder, M.; Lebedev, A.; Grötzschel, R. // Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p043109 

    In successive implantations of p- and/or n-dopants, the implantation sequence may affect the ion range distributions. This is demonstrated for two consecutive implantations into the [001] channel direction: (i) 35 keV B followed by 50 keV As and (ii) 50 keV As followed by 35 keV B. The defects...

  • Oxygen precipitation and secondary defects in silicon by high energy ion implantation and... Yoon, Sahng-Hyun; Kwack, Kae-Dal // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2448 

    Presents information on a study investigated the oxygen precipitation and secondary defects in silicon using high energy ion implantation and a two-step annealing method. Experimental procedure; Results and discussion; Conclusions.

  • A low energy limit to boron channeling in silicon. Lever, R. F.; Brannon, K. W. // Journal of Applied Physics;5/1/1991, Vol. 69 Issue 9, p6369 

    Presents a study that investigated the occurrence of a channeling tail in the implantation of boron into silicon. Simulation of the channeling tails; Cause of the tails confirmed by the analysis of ion trajectories in the simulation; Possible explanations for the disappearance of high-order...

  • Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon. Solmi, S.; Bersani, M.; Sbetti, M.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted // Journal of Applied Physics;10/15/2000, Vol. 88 Issue 8, p4547 

    Studies the nature of ion-implantation induced clusters of boron and silicon-self interstitials and their effects on transient enhanced diffusion of B in Si in samples predoped with B at different concentrations. Introduction of excess Si interstitials by Si[sup +] implantation; Evaluation of...

  • Recoil implantation of boron into silicon by high energy silicon ions. Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p900 

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident...

  • Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation. Myasnikov, A. M.; Obodnikov, V. I.; Seryapin, V. G.; Tishkovskiı, E. G.; Fomin, B. I.; Cherepov, E. I. // Semiconductors;Mar1997, Vol. 31 Issue 3, p279 

    The temperature range in which oscillating impurity distributions are formed in heavily borondoped silicon irradiated with boron ions B[sup +] is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more efficiently in the region of the maximum of...

  • Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon. Haynes, T. E.; Eaglesham, D. J.; Stolk, P. A.; Gossmann, H.-J.; Jacobson, D. C.; Poate, J. M. // Applied Physics Letters;9/2/1996, Vol. 69 Issue 10, p1376 

    Ion implantation of Si (60 keV, 1×1014/cm2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1×1018 and 1×1019/cm3. Following post-implantation annealing at 740 °C for 15 min to allow...

  • Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features. Martin-Bragado, I.; Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rublo, J. E.; Barbolla, J. // Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4962 

    The atomistic physically based kinetic Monte Carlo method has been used in conjunction with the binary collision approximation (BCA) to elucidate the implant mechanisms most relevant for modeling transient-enhanced diffusion (TED). For the cases studied, we find that: (i) The spatial correlation...

  • Capless annealing of ion implanted GaAs in automatically evaporated vapor. Lee, C. T. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p554 

    A simplified automatic vapor capless annealing technique for ion implanted GaAs wafers is demonstrated. The basic method is to put an implanted GaAs wafer in a partially sealed quartz crucible which is filled with GaAs powder. The measured Hall mobility of the implanted sample annealed by this...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics