High-mobility carbon-nanotube thin-film transistors on a polymeric substrate

Snow, E. S.; Campbell, P. M.; Ancona, M. G.; Novak, J. P.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p033105
Academic Journal
We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the devices is composed of a random two-dimensional network of single-walled carbon nanotubes (SWNTs). The devices exhibit a field-effect mobility of 150 cm2/Vs and a normalized transconductance of 0.5 mS/mm. The ratio of on-current (Ion) to off-current (Ioff) is ∼100 and is limited by metallic SWNTs in the network. With electronic purification of the SWNTs and improved gate capacitance we project that the transconductance can be increased to ∼10–100 mS/mm with a significantly higher value of Ion/Ioff, thus approaching crystalline semiconductor-like performance on polymeric substrates.


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