Suppression of intrinsic bistability in resonant-tunneling diode by in-plane magnetic field

Serov, A. Yu.; Zegrya, G. G.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032108
Academic Journal
Using the Bardeen formalism, we calculated the electron tunneling through a double barrier structure with an in-plane magnetic field. It is shown that the in-plane magnetic field has two effects on the current–voltage characteristics. First, it reduces the width of the bistable region. At high magnetic fields, the bistability can be completely suppressed. This can provide a method for tuning the bistable region in a double barrier structure. Second, it modifies the peak current. The dependence of the peak current on the magnetic field is different in the cases of high and low electron concentrations in the quantum well.


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