III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Cai, Y.; Zhou, Y. G.; Chen, K. J.; Lau, K. M.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032109
Academic Journal
In this letter, a III-nitride metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) was demonstrated by incorporating a sputtered AlON layer in the AlGaN/GaN heterostructure field-effect transistors (HFET). The AlON layer was deposited on the HFET structure by magnetron sputtering, followed by rapid thermal annealing at 850 °C for 45 s. A reverse gate leakage current that is four orders of magnitude lower was obtained in the MISHFET, compared to that in HFET. The MISHFET also shows 20% increase in the drain saturation current. For a MISHFET with 1-μm-long gate, the current gain cutoff frequency, ft and the power gain cutoff frequency, fmax are measured to be 13 and 37 GHz, respectively.


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