TITLE

Lateral electron transport through single self-assembled InAs quantum dots

AUTHOR(S)
Jung, M.; Hirakawa, K.; Kawaguchi, Y.; Komiyama, S.; Ishida, S.; Arakawa, Y.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p033106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4.2 K. Coulomb blockade oscillation which reflects single electron charging in the QDs was also observed when a backgate voltage was swept. It is found that uncapped as-grown InAs QDs with diameter >=50 nm contain electrons without applying a gate bias.
ACCESSION #
16345287

 

Related Articles

  • Optical studies of zero-field magnetization of CdMnTe quantum dots: Influence of average size and composition of quantum dots. Gurung, T.; Mackowski, S.; Jackson, H. E.; Smith, L. M.; Heiss, W.; Kossut, J.; Karczewski, G. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7407 

    We show that through the resonant optical excitation of spin-polarized excitons into CdMnTe magnetic quantum dots (QD), we can induce a macroscopic magnetization of the Mn impurities. We observe very broad (4-meV linewidth) emission lines of single dots, which are consistent with the formation...

  • Non-Markovian decoherence dynamics of electrons in a double quantum dot system. Tu, Matisse Wei-Yuan; Wei-Min Zhang // AIP Conference Proceedings;11/8/2008, Vol. 1074 Issue 1, p79 

    We develop a non-perturbative theory for describing decoherence dynamics of electron charges in the double quantum dot gated by electrodes. We extend the Feynman-Vernon’s influence functional theory to fermionic environments and derive an exact master equation for the reduced density...

  • Vertical quantum dot with a vertically coupled charge detector. Zaitsu, Koichiro; Kitamura, Yosuke; Ono, Keiji; Tarucha, Seigo // Applied Physics Letters;1/21/2008, Vol. 92 Issue 3, p033101 

    We fabricated a vertical quantum dot equipped with a charge detector. The dot current flows vertically between the top and bottom contacts. The charge detector is formed at the bottom contact layer with a current channel constricted to the region just under the dot. This channel current is...

  • Excitation Dynamics of CdTe/ZnTe Quantum Dots Studied in Picosecond Timescale. Kazimierczuk, T.; Goryca, M.; Koperski, M.; Nowak, S.; Wojnar, P.; Golnik, A.; Gaj, J. A.; Kossacki, P. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p305 

    We present a study of photoluminescence dynamics of CdTe/ZnTe quantum dots using subpicosecond excitation correlation technique. The quantum dot is excited by pairs of light pulses with tuned delay between them. The variation of relative intensity of photoluminescence lines corresponding to...

  • Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect. Eslami, L.; Faizabadi, E. // Journal of Applied Physics;2014, Vol. 115 Issue 20, p204305-1 

    The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the...

  • Electronic Coupling between Self-Assembled Quantum Dots Tuned by High Pressure. Rybchenko, S. I.; Itskevich, I. E.; Cahill, J.; Tartakovskii, A. I.; Skolnick, M. S.; Hill, G.; Hopkinson, M. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p687 

    We report experimental evidence for electronic coupling in vertical stacks of InGaAs/GaAs self-assembled quantum dots. Tuning of the coupling was achieved by means of high hydrostatic pressure. We show that application of pressure reduces and eventually quenches the coupling. The effect is due...

  • Temperature dependence of the dynamics of optical spin injection in self-assembled InGaAs quantum dots. Kiba, Takayuki; Yang, Xiao-jie; Yamamura, Takafumi; Kuno, Yuki; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p082405 

    We report the temperature dependence of the dynamics of optical spin injection from GaAs barriers into self-assembled quantum dots (QDs) of In0.5Ga0.5As. Transient circular-polarization properties of photoluminescence (PL) from excited states in QDs depend strongly on the temperature (T) and...

  • Proximity effect of electron beam lithography for single-electron transistor fabrication. Hu, Shu-Fen; Sung, Chin-Lung; Huang, Kuo-Dong; Wan, Yue-Min // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3893 

    In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (Id) of the device oscillates against...

  • Discrimination of quantum dots using an optically created nuclear field. Sasakura, H.; Kaji, R.; Adachi, S.; Muto, S. // Applied Physics Letters;1/28/2008, Vol. 92 Issue 4, p041915 

    We investigated an optically created nuclear field in a single InAlAs quantum dot and demonstrated that the nuclear field can be used to discriminate whether photoluminescence lines originate from the same dot or a different dot. Since the nonlinear response of the nuclear field is sensitive to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics