TITLE

Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic light-emitting diode displays

AUTHOR(S)
Servati, Peyman; Nathan, Arokia
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p033504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We examine the orientation dependence of strain-induced shifts in current and mobility of hydrogenated amorphous silicon thin-film transistors (TFTs). Longitudinal and transverse TFT mirrors are presented for design of strain-tolerant ΔVT-compensating pixel driver circuits for active-matrix organic light-emitting diode displays.
ACCESSION #
16345286

 

Related Articles

  • Bicolor LED driver uses two leads. Marcoccia, Mario // EDN;5/13/2010, Vol. 55 Issue 9, p46 

    The article describes an electronic design concept of a bicolor light emitting diode (LED) driver that functions with 2 heads. The circuit design identifies the proper condition of the left and right side bags, which have 2 locks that must be shut for defense. The diode, transistor and resistor...

  • Binary decoder lights the way. Guiot, Jean-Bernard // Electronics Weekly;3/11/2009, Issue 2374, p12 

    The article offers suggestions for resolving the problem related to the display of status of two digital outputs. The problem, as reported, is resolved by using a circuit design which displays four states on four light-emitting diodes (LEDs). It is stated that, for solving the problem an...

  • LED lighting driver reference design.  // Electronics Weekly;9/14/2005, Issue 2209, p43 

    The article presents information on a reference design for a driver circuit for off-line LED lighting offered by Power Integrations Inc. The company claims that it requires only nine components to deliver 40mA of current and 0.5W of output power, used in typical emergency exit signs, nightlights...

  • Create LED-lighting patterns without a controller. Tregre, Jeff // EDN;3/18/2010, Vol. 55 Issue 6, p77 

    The article describes a design idea of a simple light emitting diode (LED) lighting effects circuit comprising of only five chips and without a controller. It cites that the circuit comprises seven functional blocks and generates lighting effects similar to circuits with peripheral-interface...

  • 4.3 GHz optical bandwidth light emitting transistor. Walter, G.; Wu, C. H.; Then, H. W.; Feng, M.; Holonyak, N. // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p241101 

    We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, β (=|ΔIC/ΔIB|) as high as 30, and can be operated as a...

  • Switching regulator efficiently controls white-LED current. Grantham, Clayton B. // EDN;4/27/2006, Vol. 51 Issue 9, p98 

    The article focuses on the use of the LM2852 switched-mode bucking regulator in controlling the current flow through a white light-emitting diode (LED). One method of biasing an LED involves connecting a resistor in series with the LED to limit its maximum current. Using a series resistor allows...

  • Metal-insulator-semiconductor-type organic light-emitting transistor on plastic substrate. Nakamura, Kenji; Hata, Takuya; Yoshizawa, Atsushi; Obata, Katsunari; Endo, Hiroyuki; Kudo, Kazuhiro // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p103525 

    The authors report the characteristics of novel metal-insulator-semiconductor-type organic light-emitting transistors (MIS-OLETs). The drain current and luminescent intensity of the MIS-OLET can be controlled by changing hole injection carriers by applying a gate bias voltage. In addition, the...

  • Semitransparent passive matrix organic light-emitting displays. Li-Wei Tan; Chan-Choy Chum; Kian-Soo Ong; Xiaotao Hao; Ou, Eric; Furong Zhu // Journal of Materials Science: Materials in Electronics;Sep2007, Vol. 18 Issue 9, p913 

    There has been an increased interest in developing top emission organic light-emitting diodes (OLEDs) that are able to emit light from both sides of the OLED display. One important application of the top emission device structure is to achieve monolithic integration of a top-emitting OLED on a...

  • Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors. Hiramatsu, Hidenori; Koizumi, Ikue; Kim, Ki-Beom; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Matsunami, Noriaki; Hosono, Hideo // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113723 

    Copper selenide, CuxSe(x∼2), was examined as a hole-injection layer for low-temperature organic devices. Crystalline CuxSe films grown at room temperature with atomically flat surfaces exhibited metallic conduction with a high electrical conductivity of 4.5×103 S/cm, a hole...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics