Co-doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method

Lee, Yun-Hi; Yoo, Je-Min; Park, Dong-hyuk; Kim, D. H.; Ju, B. K.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p033110
Academic Journal
We report on the fabrication of Co 3.4 at. % doped TiO2 nanowire-based field-effect transistors with a back gate of heavily doped Si substrate and their electric field-effect functions. The TiO2:Co nanowire, which was fabricated utilizing a conventional magnetron sputtering technique on a suspended molecular template between electrodes, is a polycrystalline and consists of a chain of nanoparticles on a molecular template. The N-type field-effect transistors prepared from the suspended Co–TiO2 nanowire junction were exhibited on currents, transconductances, and a mobility of up to 0.1 mA/μm, 0.2 μA/V, and μe≈66 cm2/V s, respectively, at room temperature. The unique structure of these inorganic-organic functional devices may enable the fabrication of flexible nanoelectrospin devices.


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