CaF2/Si/CaF2 resonant tunneling diodes grown by B surfactant-mediated epitaxy

Wang, C. R.; Bierkandt, M.; Paprotta, S.; Wietler, T.; Hofmann, K. R.
January 2005
Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p033111
Academic Journal
A special solid-phase epitaxy technique utilizing the surfactant B for the growth of crystalline Si-QWs on CaF2/Si(111) enabled us to grow CaF2/Si/CaF2 double-barrier diodes exhibiting resonant tunneling effects from 77 K up to room temperature with peak voltages at 0.2 eV, which is very close to simple resonant tunneling model predictions. The peak voltages and currents were virtually independent of temperature. No trapping or hysteresis effects were found in the I–V characteristics which exhibited 2–7 orders of magnitude larger peak current densities than previously reported CaF2/Si/CaF2 RTDs.


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