TITLE

Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates

AUTHOR(S)
Shengurov, V. G.; Pavlov, D. A.; Svetlov, S. P.; Chalkov, V. Yu.; Shilyaev, P. A.; Stepikhova, M. V.; Krasil'nikova, L. V.; Drozdov, Yu. N.; Krasil'nik, Z. F.
PUB. DATE
January 2005
SOURCE
Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p89
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The possibility of using sublimation molecular-beam epitaxy as an efficient method for growing erbium-doped silicon layers on sapphire substrates for optoelectronic applications is analyzed. The advantage of this method is that the erbium-doped silicon layers can be grown at relatively low temperatures. The use of sublimation molecular-beam epitaxy makes it possible to grow silicon layers of good crystal quality. It is demonstrated that the growth temperature affects not only the structure of silicon-on-sapphire layers but also the crystallographic orientation of these layers. The electrical and luminescence properties of the erbium-doped silicon layers are discussed. It is revealed that structures of this type exhibit intense erbium photoluminescence at a wavelength of 1.54μm. © 2005 Pleiades Publishing, Inc.
ACCESSION #
16145900

 

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