Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

Uedono, A.; Chichibu, S. F.; Higashiwaki, M.; Matsui, T.; Ohdaira, T.; Suzuki, R.
February 2005
Journal of Applied Physics;2/15/2005, Vol. 97 Issue 4, p043514
Academic Journal
High-quality InN layers grown on sapphire substrates by plasma-assisted molecular-beam epitaxy were characterized using monoenergetic positron beams. The carrier concentrations of the films were controlled by Si doping (2.1×1018 to 1.4×1019 cm-3), and the highest obtained Hall mobility was 1300 cm2 V-1 s-1. The Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of the incident positron energy for undoped and Si-doped InN films. The line-shape parameter S increased with increasing carrier concentration, suggesting the introduction of vacancy-type defects by a Fermi-level effect. The major defect species were varied with carrier concentration, and its species were identified as In vacancies (VIn) or their related defects.


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