Ferroelectric behaviors and charge carriers in Nd-doped Bi4Ti3O12 thin films

Gao, X. S.; Xue, J. M.; Wang, J.
February 2005
Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034101
Academic Journal
Nd-doped Bi4Ti3O12 thin films, (Bi3.25Nd0.85)4Ti3O12, of layered perovskite structure were synthesized by rf sputtering, followed by postannealing at 600–700 °C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650–750 °C. When annealed at 700 °C, a remanent polarization 2Pr of 25.2 μC/cm2 and a coercive field Ec of 87.2 kV/cm were measured at 9 V, together with an almost fatigue-free behavior up to 1.4×1010 switching cycles. Their ferroelectric, dielectric, and ac conductivity properties over the temperature range from 25 to 300 °C were studied over the frequency range of 0.1–1 MHz. Space-charge relaxation by oxygen vacancies was shown to play an important role in determining the dielectric and conductivity behaviors of Nd-doped Bi4Ti3O12 thin films.


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