Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate

Nemouchi, F.; Mangelinck, D.; Bergman, C.; Gas, P.; Smith, Ulf
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p041903
Academic Journal
The formation of nanometric Ni silicide films on a Si wafer is analyzed using differential scanning calorimetry (DSC) and isothermal x-ray diffraction measurements. The sensitivity of DSC is remarkable even in this experimental configuration constituted of a Ni/Si bilayer deposited on a Si substrate. Both methods confirm the sequential growth of Ni2Si and NiSi (for T<700 °C). However the kinetics of growth of the first silicide formed (Ni2Si) cannot be fitted, for the two sets of measurements, by a simple parabolic law. Better agreement is obtained using a linear-parabolic growth law and a smaller activation energy for the linear term (0.8 eV) than for the parabolic one (1.5 eV).


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