Effect of film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs

Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Denlinger, J.; Scarpulla, M.A.; Liu, X.; Furdyna, J.K.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p042102
Academic Journal
We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga1-xMnxAs thin films. We find that the growth surface acts as a sink facilitating the outdiffusion of Mn interstitials (MnI), and thus reducing its concentration in the film. The outdiffused MnI accumulate on the surface in a surface oxide layer and do not participate in the ferromagnetism of the film. For thin films less than 15 nm thick, no MnI can be detected. Because of the absence of compensating MnI defects, higher TC can be achieved for such extremely thin Ga1-xMnxAs layers. These results agree with our previously suggested Fermi-level-governed upper limit of the TC of III–Mn–V ferromagnetic semiconductors.


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