Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness

Zubiaga, A.; Tuomisto, F.; Plazaola, F.; Saarinen, K.; Garcia, J.A.; Rommeluere, J.F.; Zuñiga-Pérez, J.; Muñoz-Sanjosé, V.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p042103
Academic Journal
Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500 nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1 μm it is independent of the substrate orientation.


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