Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

Cho, K.H.; Choi, B.H.; Son, S.H.; Hwang, S.W.; Ahn, D.; Park, B.-G.; Naser, B.; Lin, J.-F.; Bird, J.P.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p043101
Academic Journal
We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dID/dVDS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.


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